TDK CeraLink capacitors feature a newly patented antiferroelectric capacitor technology whose material exhibits increasing capacitance with increasing voltage. Thanks to this unique capability CeraLink capacitors are an ideal solution for snubber applications. Based on their newly patented antiferroelectric capacitor technology, the capacitance of TDK CeraLink capacitors rises with increasing voltage.

Capacitance to voltage

Thanks to their extremely low ESL and ESR properties, CeraLink capacitors support higher switching frequencies and the use of lower-cost and more robust semiconductors (e.g. high-speed IGBTs versus MOSFETs). The latest IGBTs offer an excellent price-performance ratio because of their significantly lower manufacturing complexity, chip areas that are often smaller than superjunction MOSFETs, and their high switching frequencies. The cost of this type of solution is typically about one third lower than a MOSFET solution. Furthermore, capacitor value, board space, magnetics, heat sink and so on can also be reduced significantly so that the total cost of solution (TCS) can be reduced by more than 40 percent.

When used for system integration only, CeraLink capacitors reduce the risk that semiconductors are damaged by peak overvoltages caused by the system approach. The snubber function keeps the semiconductors in the safe operating area.

New patented system solution

The CeraLink multilayer design featuring a newly designed ceramic material in combination with copper inner electrodes offers clear advantages in terms of both economy and performance.

Advantages

• ESR decreases drastically with temperature
• Extremely low ESL
• Cu inner electrode material properties are beneficial for high frequency switching with low losses and allow fast slew rates with a high I_max
• Suitable for switching frequencies up to and above 1 MHz
• Wide operating temperature range up to +150 °C (also suitable for SiC/ GaN)
• Low losses at high frequencies
• Supports fast-switching semiconductor
• Supports further miniaturization of power electronics on the system level
• Ultra low leakage currents due to material selection
• With increasing frequencies the dielectric losses are decreasing
• Terminals for solder and for modern fast press fit technology
• Increasing capacitance with DC bias up to operating voltage
• Compact housing with options for typical power modules for industrial and automotive
• Special types for integration into power modules (IGBT/ MOSFET/ SiC)

Features

• High capacitance density
• Extremely low ESR and low ESL
• High current density, effective ripple voltage reduction capability
• Increasing effective capacitance with rising voltage
• Capable for high temperature excursions
• Low losses at high frequencies
• Supports fast switching semiconductors
• Supports further miniaturization of power electronics on the system level

Specifications

• Insulation resistance: >1 GΩ very high, thus resulting in a very low leakage current, especially at high temperatures
• ESL<3.5 nH and thus extremely low
• Operating temperature -40 °C to +125 °C (for short periods up to +150 °C), thus also suitable for SiC and GaN