TDK presents DC-link capacitors with ultra-low inductance for SiC-based power electronics

TDK Corporation (TSE:6762) presents the B25696H* series of MKP DC high-frequency (HF) film capacitors, a reliable, high-performance DC link capacitor platform for next-generation SiC-based power electronics. With capacitance values from 47 µF to 1280 µF and rated DC voltages from 900 V to 2000 V, the components provide ultra-low self-inductance and low ESR to meet the demands of modern high-switching-frequency topologies. Typical applications for the B25696H are energy storage systems (ESS), solid-state transformers (SST), renewable energy inverters, traction drives, and industrial motor drives. 

A key differentiator of the B25696H series is its unique internal busbar configuration, which ensures homogeneous current distribution between the capacitor windings. This design results in self-inductance values as low as 30 nH and ESR values down to 0.8 mΩ at 10 kHz, with excellent ESR stability up to 100 kHz. By minimizing parasitic inductance and resistive losses, the series reduces voltage spikes and electrical stress on SiC power devices, which enhances thermal margins and overall system reliability. 

The cylindrical capacitors feature metallized polypropylene (MKP) dielectric in an aluminum case with a resin top. They are available in two diameters (85 mm and 100 mm) with screw female (M6) terminals and a threaded mounting bolt (M12). The series operates within a temperature range of -40 °C to +85 °C (hotspot) and offers a lifetime expectancy of 100,000 hours at +75 °C hotspot temperature and respective rated voltage, extendable to up to 200,000 hours with voltage and temperature derating. High ripple current capability of up to 91 A (at +60 °C ambient temperature, 10 kHz) supports high-power-density converter designs. 

To support system-level optimization, TDK provides its free online CapThermal tool, allowing engineers to simulate thermal behavior and accurately estimate lifetime under application-specific conditions. This enables faster design cycles and more precise component selection for high-performance SiC-based power converters.